AM2310N these miniature surf ace mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ?low r ds(on) provides higher efficiency and extends battery life ? fast switch ? low gate charge ? miniature sot-23 surface mount package saves board space notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol m aximum units t <= 5 sec 250 steady-state 285 thermal resistance ratings parame te r o c/w maximum junction-to-ambient a r thja d s g v ds (v) r ds(on) ( ? )i d (a) 0.065 @ v gs = 4.5v 2.2 0.082 @ v gs = 2.5v 2.0 30 product summary symbol maximum units v ds 30 v gs 8 t a =25 o c2.2 t a =70 o c1.7 i dm 10 i s 0.45 a t a =25 o c0.5 t a =70 o c0.42 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 ua 30 v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 10 gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na ga t e -t h re s h o ld vo lt a g e v gs(th) v ds = v gs , i d = 250 ua 0.43 0.7 1.0 v on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 10 a v gs = 4.5 v, i d = 2.2 a 54 65 v gs = 4.5 v, i d = 2.2 a tj = 55 o c8099 v gs = 2.5 v, i d = 2.0 a 70 82 forward tranconductance a g fs v ds = 5 v, i d = 2.2 a 13 s diode forward voltage v sd i s = 0.45 a, v gs = 0 v 0.65 1.2 v total gate charge q g 7.0 9.0 gate-source charge q gs 1.1 gate-drain charge q gd 1.9 turn-on delay time t d(on) 411 ris e time t r 11 19 turn-off delay time t d(off) 18 30 fall-time t f 510 nc v ds = 10 v, i d = 1 a, r g = 6 ? , v gen = 4.5 v switch on characte ristics unit switching drain-source on-resistance a r ds(on) m ? ns dynamic b v ds = 10 v, v gs = 4.5 v, i d = 2.2 a specifications (t a = 25 o c unless otherwise noted) switch off characte ris tics te st conditions zero gate voltage drain current i dss a symbol parame te r limits AM2310N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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